DatasheetsPDF.com

C3306

INCHANGE
Part Number C3306
Manufacturer INCHANGE
Title Silicon NPN Power Transistor
Description ·High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min) ·High Switching Speed ·High Reliabi...
Features V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE...
Published Apr 14, 2021
Datasheet PDF File C3306 PDF File


C3306
C3306


Features
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA ; IE= 0 VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A I...



Similar Datasheet


INDEX :57ABCDEFGHIJKLMNOPQRSTUVWXYZ

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)