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VSI004N10MS-G

Vanguard Semiconductor
Part Number VSI004N10MS-G
Manufacturer Vanguard Semiconductor
Description N-Channel Advanced Power MOSFET
Published Apr 12, 2021
Detailed Description Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.5 V  VitoMOS® Ⅱ Technology  Fast Switching and High ef...
Datasheet PDF File VSI004N10MS-G PDF File

VSI004N10MS-G
VSI004N10MS-G

Overview
Features  Enhancement mode  Low on-resistance RDS(on) @ VGS=4.
5 V  VitoMOS® Ⅱ Technology  Fast Switching and High efficiency  100% Avalanche Tested  Pb-free lead plating; RoHS compliant  VSI004N10MS-G 100V/130A N-Channel Advanced Power MOSFET V DS R @ DS(on),TYP VGS=10 V R @ DS(on),TYP VGS=4.
5 V ID 100 V 4.
5 mΩ 7.
0 mΩ 130 A TO-251 Part ID VSI004N10MS-G Package Type TO-251 Marking 004N10M Tape and reel information 75pcs/Tube Maximum ratings, at TA =25°C, unless otherwise specified Symbol Parameter V(BR)DSS VGS Drain-Source breakdown voltage Gate-Source voltage IS Diode continuous forward current ID Continuous drain current @VGS=10V IDM Pulse drain current tested ① IDSM Continuous drain current @VGS=10V EAS Avalanche energy, single pulsed ② PD PDSM Maximum power dissipation Maximum power dissipation ③ TSTG , TJ Storage and Junction Temperature Range Thermal Characteristics Symbol Parameter R JC Thermal Resistance, Junction-to-Case R JA Thermal R...


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