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FS8205A

FUXINSEMI
Part Number FS8205A
Manufacturer FUXINSEMI
Description N-Channel MOSFET
Published Apr 7, 2021
Detailed Description Product Summary V(BR)DSS RDS(on)MAX ID 25mΩ@4.5V 20V 6A 32mΩ@2.5V FS8205A N-Channel Enhancement Mode MOSFET Fea...
Datasheet PDF File FS8205A PDF File

FS8205A
FS8205A

Overview
Product Summary V(BR)DSS RDS(on)MAX ID 25mΩ@4.
5V 20V 6A 32mΩ@2.
5V FS8205A N-Channel Enhancement Mode MOSFET Feature Advanced trench process technology High density cell design for ultra low on-resistance Application Battery protection Switching application Package Circuit diagram SOT-23-6L Marking G1 D1/D2 G2 8205A S1 D1/D2 S2 www.
fuxinsemi.
com Page 1 Ver2.
1 FS8205A N-Channel Enhancement Mode MOSFET Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation Junction Temperature Storage Temperature VDS 20 V VGS ±12 V ID 6 A IDM 25 A PD 1.
5 W TJ -55 ~ +150 ℃ TSTG -55 ~ +150 ℃ Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Test Condition Static Characteristics Drain-source breakdown voltage Zero gate voltage drain current V(BR)DSS IDSS VGS = 0V, ID =250µA VDS =20V,VGS = 0V Gate...


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