NPN TRANSISTOR - AiT Semiconductor
Description
AiT Semiconductor Inc.
www.
ait-ic.
com
2SC3356L
GENERAL PURPOSE TRANSISTOR NPN SILICON RF TRANSISTOR
DESCRIPTION
The 2SC3356L is available in SOT-23 package.
ORDERING INFORMATION
Package Type
Part Number
SOT-23
2SC3356L-X
X=A,B
Note
See below hFE Classification Table
SPQ: 3,000pcs/Reel
AiT provides all RoHS Compliant Products
hFE CLASSIFICATION
Classification Marking hFE
A R24 80-140
B R25 120-200
FEATURES
⚫ High gain:︱S21E︱2 TYP.
Value is 12dB @VCE=10V, IC=30mA, f=1GHz
⚫ Low noise: NF TYP.
Value is 1.
5dB @VCE=10V, IC=7mA, f=1GHz
⚫ fT (TYP.
) : TYP.
Value is 8GHz @VCE=10V, IC=30mA
⚫ Ultra high frequency low noise transistor ⚫ Silicon epitaxial bipolar process.
⚫ High power gain, low noise figure, ⚫ High dynamic range and ideal current
characteristics ⚫ Mainly used in VHF, UHF and CATV ⚫ High frequency wideband low noise amplifier.
⚫ Available in SOT-23 package
PIN DESCRIPTION
REV2.
1 - MAR 2012 RELEASED, JUN 2017 UPDATED -
-1-
AiT Semiconductor Inc.
www.
ait-ic.
com
2SC3356L
GENERAL PURPOSE TRANSISTOR NPN SILICON RF TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
TA=25℃, unless Otherwise noted
VCBO, Collector-base breakdown voltage
20V
VCEO, Collector-emitter breakdown voltage
15V
VEBO, Emitter-base breakdown voltage
2V
IC, Collector Current
100mA
PC, Collector Power Dissipation
365mW
TJ, Junction Temperature
150℃
TSTG, Storage Temperature
-65℃~+150℃
Stresses above may cause permanent damage to the device.
These are stress ratings only and functional operation of the device at these or any other conditions beyond those indicated in the Electrical Characteristics are not implied.
Exposure to absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
TA = 25°C, unless otherwise specified
Parameter
Symbol
Collector-base breakdown voltage
VCBO
Collector Cutoff Current
ICBO
Emitter Cutoff Current
IEBO
DC Current Gain
hFE
Gain Bandwidth Product
fT
Insertion Power Gain
S21E 2
Noise...
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