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B817C

Part Number	B817C
Manufacturer	ON Semiconductor
Description	Bipolar Transistor
Published	Apr 2, 2021
Detailed Description	Ordering number : ENA0188B 2SB817C Bipolar Transistor –140V, –12A, Low VCE(sat) PNP TO-3P-3L http://onsemi.com Feature...
Datasheet	B817C PDF File

Overview

Ordering number : ENA0188B 2SB817C Bipolar Transistor –140V, –12A, Low VCE(sat) PNP TO-3P-3L http://onsemi.
com Features • Large current capacitance • Wide SOA and high durability against breakdown • Adoption of MBIT process Speciﬁcations Absolute Maximum Ratings at Ta=25°C Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current Collector Current (Pulse) Symbol VCBO VCEO VEBO IC ICP Collector Dissipation PC Junction Temperature Tj Storage Temperature Tstg Tc=25°C Conditions Ratings Unit -160 V -140 V --6 V --12 A --20 A 2.
5 W 120 W 150 °C --55 to +150 °C Stresses exceeding Maximum Ratings may damage the devic...

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