SWITCHING DIODE - Microsemi
Description
1N4150-1
FEATURES
• 1N4150-1 AVAILABLE IN JAN, JANTX, AND JANTXV PER MIL-PRF-
19500/231
• SWITCHING DIODE • METALLURGICALLY BONDED • HERMETICALLY SEALED • DOUBLE PLUG CONSTRUCTION
MAXIMUM RATINGS AT 25 °C
Operating Temperature: Storage Temperature: Surge Current A, sine 1uS: Surge Current B, sine 1S: Total Power Dissipation: Operating Current:
Derating Factor:
D.
C.
Reverse Voltage (VRWM):
-65°C to +175°C -65°C to +175°C 4.
0A 0.
5A 500mW 200mA, TA= +25°C to +75°C
2mA/°C above TL (3/8”)= +75°C
50V
DC ELECTRICAL CHARACTERISTICS
VF
IR
Ambient IF
(°C)
mA
Min Max Ambient
Min Max Ambient
V V (°C) V (dc) µA µA (°C)
25
1 .
54 .
62 25 50 - 0.
1 25
25 10 .
66 .
74 150 50 - 100
25 50 .
76 .
86
25 100 .
82 .
92
25 200 .
87 1.
00
VBR
IR Min Max µA V V
10 75 -
DESIGN DATA
Case: Hermetically sealed glass package per MILPRF-19500/231 DO-35 outline
Lead Material: Copper clad steel Lead Finish: Tin/Lead Thermal Resistance (RθJL): 250°C/W maximum
at L=.
375” Thermal Impedance (ZθJX): 70°C/W maximum Marking: Alpha numeric.
Polarity: Cathode end is banded.
AC ELECTRICAL CHARACTERISTICS AT 25°C
Symbol Min Max
Capacitance @ 0V
pF
-
2.
5
TRR @ IF =IR=10mA, IRec = 1mA.
nsec
-
4
VFR @ IF= 200mA
V
-
5
TFR @ IF = 200mA
nsec
-
10
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