NPN Silicon Transistor - Fairchild Semiconductor
Description
KSE13007F
KSE13007F
High Voltage Switch Mode Application
• High Speed Switching • Suitable for Switching Regulator and Motor Control
1
TO-220F
1.
Base 2.
Collector 3.
Emitter
NPN Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Symbol
Parameter
VCBO V CEO VEBO IC ICP IB PC TJ TSTG
Collector- Base Voltage Collector- Emitter Voltage Emitter- Base Voltage Collector Current (DC) Collector Current (Pulse) Base Current Collector Dissipation (TC=25°C) Junction Temperature Storage Temperature
Value 700 400
9 8 16 4 40 150 - 65 ~ 150
Units V V V A A A W °C °C
Electrical Characteristics TC=25°C unless otherwise noted
Symbol
Parameter
Test Condition
BVCEO IEBO hFE
VCE(sat)
Collector-Base Breakdown Voltage Emitter Cut-off Current DC Current Gain
Collector-Emitter Saturation Voltage
VBE(sat)
Base-Emitter Saturation Voltage
Cob
Output Capacitance
fT
Current Gain Bandwidth Product
tON
Turn On Time
tSTG
Storage Time
tF
Fall Time
* Pulse Test: PW≤300µs, Duty Cycle≤2%
IC = 10mA, IB = 0
VEB = 9V, IC = 0
VCE = 5V, IC = 2A VCE = 5V, IC = 5A
IC = 2A, IB = 0.
4A IC = 5A, IB = 1A IC = 8A, IB = 2A
IC = 2A, IB = 0.
4A IC = 5A, IB = 1A
VCB = 10V , f = 0.
1MHz
VCE = 10V, IC = 0.
5A
VCC =125V, IC = 5A IB1 = - IB2 = 1A RL = 50Ω
Min.
400
8 5
4
Typ.
110
Max.
1 60 30 1 2 3 1.
2 1.
6
1.
6 3
0.
7
Units V mA
V V V V V pF MHz µs µs µs
©2002 Fairchild Semiconductor Corporation
Rev.
A2, June 2002
Typical Characteristics
100
VCE = 5V
10
hFE, DC CURRENT GAIN
1
0.
1
1
10
IC[A], COLLECTOR CURRENT
Figure 1.
DC current Gain
1000
Cob[pF], CAPACITANCE
100
10
1
0.
1
1
10
100
1000
V [V], COLLECTOR-BASE VOLTAGE CB
Figure 3.
Collector Output Capacitance
tSTG, tF [µs], TURN OFF TIME
10000 1000
V =125V CC
I =5I
C
B
tSTG
100 tF
10
0.
1
1
10
IC[A], COLLECTOR CURRENT
Figure 5.
Turn Off Time
©2002 Fairchild Semiconductor Corporation
IC[A], COLLECTOR CURRENT
tR, tD [µs], TURN ON TIME
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
10
I =3I
...
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