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D100E60

Infineon
Part Number D100E60
Manufacturer Infineon
Description Fast Switching Emitter Controlled Diode
Published Mar 23, 2021
Detailed Description Fast Switching Emitter Controlled Diode IDW100E60 Features:  600V Emitter Controlled technology  Fast recovery  Sof...
Datasheet PDF File D100E60 PDF File

D100E60
D100E60


Overview
Fast Switching Emitter Controlled Diode IDW100E60 Features:  600V Emitter Controlled technology  Fast recovery  Soft switching  Low reverse recovery charge  Low forward voltage  175°C junction operating temperature  Easy paralleling  Pb-free lead plating; RoHS compliant  Complete product spectrum and PSpice Models: http://www.
infineon.
com Applications:  Welding  Motor drives PG-TO247-3 Type IDW100E60 VRRM 600V IF 100A Maximum Ratings Parameter Repetitive peak reverse voltage Continuous forward current TC = 25C TC = 90C TC = 100C Surge non repetitive forward current TC = 25C, tp = 10 ms, sine halfwave Maximum repetitive forward current TC = 25C, tp limited by tj,max, D = 0.
5 Power dissipation TC = 25C TC = 90C TC = 100C Operating junction temperature Storage temperature Soldering temperature 1.
6mm (0.
063 in.
) from case for 10 s VF,Tj=25°C 1.
65V Tj,max 175C Marking D100E60 Package PG-TO247-3 Symbol VRRM IF IFSM IFRM Ptot Tj Tstg TS Value Unit 600 V 150 104 A 96 400 A 300 A 375 W 212 198 -40…+175 -55.
.
.
+150 °C 260 IFAG IPC TD VLS 1 Rev.
2.
3 20.
09.
2013 IDW100E60 Thermal Resistance Parameter Characteristic Thermal resistance, junction – case Thermal resistance, junction – ambient Symbol RthJC RthJA Conditions Max.
Value Unit 0.
40 K/W 40 Electrical Characteristic, at Tj = 25 C, unless otherwise specified Parameter Symbol Conditions Static Characteristic Collector-emitter breakdown voltage Diode forward voltage VRRM VF Reverse leakage current IR IR=0.
25mA IF=100A Tj=25C Tj=175C VR=600V Tj=25C Tj=175C Dynamic Electrical Characteristics Diode reverse recovery time trr Diode reverse recovery charge Qrr Diode peak reverse recovery current Irr Diode peak rate of fall of reverse recovery current during tb dIrr/dt Tj=25C VR=400V, IF=100A, dIF/dt=1200A/µs Diode reverse recovery time Diode reverse recovery charge Diode peak reverse recovery current Diode peak rate of fall of reverse recovery curre...


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