Power MOSFET - Vishay
Description
Power MOSFET
IRFD014, SiHFD014
Vishay Siliconix
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration
60 VGS = 10 V
11 3.
1 5.
8 Single
0.
20
D HVMDIP
S G
D
G
S N-Channel MOSFET
ORDERING INFORMATION
Package Lead (Pb)-free
SnPb
FEATURES • Dynamic dV/dt Rating • For Automatic Insertion • End Stackable • 175 °C Operating Temperature • Fast Switching • Ease of Paralleling • Simple Drive Requirements • Compliant to RoHS Directive 2002/95/EC
Available
RoHS*
COMPLIANT
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The 4 pin DIP package is a low cost machine-insertable case style which can be stacked in multiple combinations on standard 0.
1" pin centers.
The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1 W.
HVMDIP IRFD014PbF SiHFD014-E3 IRFD014 SiHFD014
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
Continuous Drain Current Pulsed Drain Currenta
TA = 25 °C
VGS at 10 V
ID
TA = 100 °C
IDM
Linear Derating Factor
Single Pulse Avalanche Energyb
EAS
Maximum Power Dissipation Peak Diode Recovery dV/dtc
TA = 25 °C
PD dV/dt
Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = 25 V, starting TJ = 25 °C, L = 52 mH, Rg = 25 , IAS = 1.
7 A (see fig.
12).
c.
ISD 10 A, dI/dt 90 A/μs, VDD VDS, TJ 175 °C.
d.
1.
6 mm from case.
LIMIT 60 ± 20 1.
7 1.
2 14
0.
0083 130 1.
3 4.
5
- 55 to + 175 300d
UNIT V
A
W/°C mJ W V/ns °C
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 91125 S10-2466-Rev.
C, 25-Oct-10
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com 1
IRFD014, SiHFD014
Vishay Siliconix
T...
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