Silicon NPN Transistor - Panasonic
Description
Transistor
2SC5557
Silicon NPN epitaxial planar type
For low-noise RF amplifier
0.
33+–00.
.
0025
Unit: mm
0.
10+–00.
.
0025
3
0.
15 min.
0.
80±0.
05 1.
20±0.
05
I Features
• High transition frequency fT
5˚
• High gain of 8.
2 dB and low noise of 1.
8 dB at 3 V
0.
23+–00.
.
0025
12
0.
15 min.
• Optimum for RF amplification of a portable telephone and pager
(0.
40) (0.
40) 0.
80±0.
05 1.
20±0.
05
I Absolute Maximum Ratings Ta = 25°C
5˚
Parameter
Symbol Rating
Unit
/ Collector to base voltage
VCBO
9
V
0 to 0.
01 0.
52±0.
03
0.
15 max.
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Publication date: May 2002
SJD00279AED
1
2SC5557
Collector power dissipation PC (mW)
Collector to emitter saturation voltage VCE(sat) (V)
PC Ta
IC VCE
hFE IC
120
0.
014
160
Forward current transfer ratio hFE
Collector to emitter voltage VCE (V)
VCE = 3 V
100
0.
012
IB = 80 µA
140 Ta = 75°C
70 µA
120
25°C
80
0.
010
60 µA
100 −25°C
0.
008
50 µA
60
40 µA
80
0.
006
30 µA
60
40
0.
004
20 µA
40
20
0 0 20 40 60 80 100 120 140 Ambient temperature Ta (°C)
0.
002
10 µA
0
0
1
2
3
4
5
Collector current IC (A)
20
0
0.
1
1
10
100 1 000
Collector current IC (mA)
e/ pe) VCE(sat) IC c ty 1
e.
d IC / IB ...
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