Transistors 2SC4835 Silicon NPN epitaxial planar type For UHF band low-noise amplification 0.3+–00..01 Unit: mm 0.15+–00..0150 (0.425) ■ Features 3 1.25±0.10 2.1±0.1 5˚ • Low noise figure NF • High forward transfer gain S21e2 • High transition frequency fT • S-Mini type package, allowing.
3
1.25±0.10 2.1±0.1 5˚
• Low noise figure NF
• High forward transfer gain S21e2
• High transition frequency fT
• S-Mini type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the magazine packing
1
2
(0.65) (0.65) 1.3±0.1 2.0±0.2
0.2±0.1
/10˚
■ Absolute Maximum Ratings Ta = 25°C
e e) Parameter
Symbol Rating
Unit
c e. d typ Collector-base voltage (Emitter open) VCBO
15
0 to 0.1 0.9±0.1 0.9
–+00..12
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
10
V
a e cle con Emitter-base voltage (Collector open) VEBO
2
V
.
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