Silicon NPN Transistor - Panasonic
Description
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4627J
Silicon NPN epitaxial planar type
0.
80±0.
05
For high-frequency amplification
1.
60+–00.
.
0035 1.
00±0.
05
Unit: mm
0.
12+–00.
.
0013
■ Features
3
(0.
375)
0.
85–+00.
.
0035 1.
60±0.
05 5˚
• Optimum for RF amplification of FM/AM radios
• High transition frequency fT
12
(0.
80)
• SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
0.
27±0.
02 (0.
50)(0.
50)
5˚
/ ■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
30
0 to 0.
02 0.
70–+00.
.
0035
V
0.
10 max.
c e.
d ty Collector-emitter voltage (Base open) VCEO
20
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
3
V
a e cle con Collector current
IC
15
mA
lifecy , dis Collector power dissipation
PC
125
mW
n u duct typed Junction temperature
Tj
125
°C
te tin Pro ed Storage temperature
Tstg −55 to +125 °C
Marking Symbol: U
1: Base 2: Emitter 3: Collector EIAJ: SC-89 SSMini3-F1 Package
in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
c d inc e typ Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
30
V
tinue anc Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
3
V
M is con inten Base-emitter voltage
VBE VCB = 6 V, IE = −1 mA
720
mV
/Dis ma Forward current transfer ratio *
hFE VCB = 6 V, IE = −1 mA
65
160
D ance type, Transition frequency
fT
VCB = 6 V, IE = −1 mA, f = 200 MHz
450 650
MHz
ten ce Reverse transfer capacitance ain nan (Common emitter)
Cre VCB = 6 V, IE = −1 mA, f = 10.
7 MHz
0.
8 1.
0
pF
M inte Power gain d ma Noise figure
PG VCB = 6 V, IE = −1 mA, f = 100 MHz
24
dB
NF VCB = 6 V, IE = −1 mA, f = 100 MHz
3.
3
dB
(plane Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
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