Silicon NPN Transistor - Panasonic
Description
Transistors
2SC4626J
Silicon NPN epitaxial planar type
0.
80±0.
05
For high-frequency amplification
1.
60+–00.
.
0035 1.
00±0.
05
Unit: mm
0.
12+–00.
.
0013
■ Features
3
(0.
375)
0.
85–+00.
.
0035 1.
60±0.
05 5˚
• Optimum for RF amplification of FM/AM radios
• High transition frequency fT
12
(0.
80)
• SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing
0.
27±0.
02 (0.
50)(0.
50)
■ Absolute Maximum Ratings Ta = 25°C
5˚
/ Parameter
Symbol Rating
Unit
0 to 0.
02 0.
70–+00.
.
0035
e Collector-base voltage (Emitter open) VCBO
30
V
0.
10 max.
pe) Collector-emitter voltage (Base open) VCEO
20
V
nc d ge.
ed ty Emitter-base voltage (Collector open) VEBO
5
V
sta tinu Collector current
IC
30
mA
a e cycle iscon Collector power dissipation
PC
125
mW
life d, d Junction temperature
Tj
125
°C
n u duct type Storage temperature
Tstg −55 to +125 °C
Marking Symbol: V
1: Base 2: Emitter 3: Collector EIAJ: SC-89 SSMini3-F1 Package
inte ntines follopwlianngefdoudrisPcroontinued ■ Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
Min Typ Max Unit
c ed in ce ty Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
0.
1
µA
tinu nan Forward current transfer ratio *
hFE VCB = 10 V, IE = −1 mA
70
220
M is iscon ainte Transition frequency
fT
VCB = 10 V, IE = −1 mA, f = 200 MHz 150 250
MHz
e/D e, m Noise figure
NF VCB = 10 V, IE = −1 mA, f = 5 MHz
2.
8 4.
0
dB
D anc typ Reverse transfer impedance
Zrb VCB = 10 V, IE = −1 mA, f = 2 MHz
22 50
Ω
inten nce Common-emitter reverse transfer Ma tena capacitance
Cre VCB = 10 V, IE = −1 mA, f = 10.
7 MHz
0.
9 1.
5
pF
ain Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
ed m 2.
*: Rank classification
(plan Rank
B
C
No-rank
hFE
70 to 140 110 to 220 70 to 220
Product of no-rank is not classified and have no indication for rank.
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