Silicon NPN Transistor - Panasonic
Description
Power Transistors
2SC4621
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching
Unit: mm
s Features
15.
0±0.
3 11.
0±0.
2
5.
0±0.
2 3.
2
0.
7
q High-speed switching
12.
5 3.
5 15.
0±0.
2
q High collector to base voltage VCBO q Wide area of safe operation (ASO)
φ3.
2±0.
1
q Full-pack package which can be installed to the heat sink with
/ one screw
21.
0±0.
5
2.
0±0.
2
2.
0±0.
1
e s Absolute Maximum Ratings (TC=25˚C)
c type) Parameter
Symbol
Ratings
Unit
16.
2±0.
5
Solder Dip
n d tage.
ued Collector to base voltage
VCBO
500
V
le s ntin VCES
500
V
a e c co Collector to emitter voltage
cy is VCEO
400
V
n u t life ed, d Emitter to base voltage
VEBO
7
V
duc typ Peak collector current
ICP
15
A
te tin ur Pro tinued Collector current
IC
7
A
fo on Base current
IB
3
A
wing disc Collector power TC=25°C
in n follo ned dissipation
Ta=25°C
PC
70 W
3.
0
des , pla Junction temperature
a o inclu type Storage temperature
Tj
150
˚C
Tstg
–55 to +150
˚C
M isc s continueindtenance Electrical Characteristics (TC=25˚C)
/Dis , ma Parameter
Symbol
Conditions
D ance type Collector cutoff current
inten nce Emitter cutoff current Ma tena Collector to emitter voltage main Forward current transfer ratio (planed Collector to emitter saturation voltage
ICBO IEBO VCEO hFE1 hFE2 VCE(sat)
VCB = 500V, IE = 0 VEB = 5V, IC = 0 IC = 10mA, IB = 0 VCE = 5V, IC = 0.
1A VCE = 5V, IC = 3A IC = 3A, IB = 0.
6A
1.
1±0.
1 5.
45±0.
3 10.
9±0.
5
123
0.
6±0.
2
1:Base 2:Collector 3:Emitter TOP–3 Full Pack Package(a)
min
typ
max Unit
100
µA
100
µA
400
V
15
8
1
V
Base to emitter saturation voltage VBE(sat)
IC = 3A, IB = 0.
6A
1.
5
V
Transition frequency
fT
VCE = 10V, IC = 0.
5A, f = 10MHz
30
MHz
Turn-on time Storage time Fall time
ton
IC = 3A, IB1 = 0.
6A, IB2 = –1.
2A,
tstg
tf
VCC = 150V
0.
7
µs
2
µs
0.
3
µs
1
Power Transistors
2SC4621
Collector power dissipation PC (W)
Base to emitter saturation voltage VBE(sat) (V)
...
Similar Datasheet
