Silicon NPN Transistor - Panasonic
Description
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4562G
Silicon NPN epitaxial planar type
For high-frequency amplification Complementary to 2SA1748G
■ Features
■ Package
• High transition frequency fT
• Code
• Small collector output capacitance (Common base, input open cir-
cuited) Cob • S-Mini type package, allowing downsizing of the equipment
SMini3-F2 • Marking Symbol: AM • Pin Name
and automatic insertion through the tape packing
1: Base
/2: Emitter
■ Absolute Maximum Ratings Ta = 25°C
e pe) Parameter
Symbol Rating
Unit
c e.
d ty Collector-base voltage (Emitter open) VCBO
50
V
n d stag tinue Collector-emitter voltage (Base open) VCEO
50
V
a e cle con Emitter-base voltage (Collector open) VEBO
5
V
lifecy , dis Collector current
IC
50
mA
n u duct typed Collector power dissipation
PC
150
mW
te tin Pro ed Junction temperature
Tj
150
°C
four ntinu Storage temperature
Tstg −55 to +150 °C
3: Collector
in n es follopwliannged disco ■ Electrical Characteristics Ta = 25°C ± 3°C
a o clud pe, Parameter
Symbol
Conditions
Min
c ed in ce ty Collector-base voltage (Emitter open) VCBO IC = 10 µA, IE = 0
50
tinu nan Collector-emitter voltage (Base open) VCEO IC = 1 mA, IB = 0
50
M is iscon ainte Emitter-base voltage (Collector open) VEBO IE = 10 µA, IC = 0
5
e/D e, m Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
D anc typ Collector-emitter cutoff current (Base open) ICEO VCE = 10 V, IB = 0
inten ance Forward current transfer ratio *
hFE VCE = 10 V, IC = 2 mA
200
Ma inten Collector-emitter saturation voltage
VCE(sat) IC = 10 mA, IB = 1 mA
ma Transition frequency
fT
VCB = 10 V, IE = −2 mA, f = 200 MHz
ned Collector output capacitance (pla (Common base, input open circuited)
Cob VCB = 10 V, IE = 0, f = 1 MHz
Typ Max
0.
1 100 500 0.
06 0.
30 250 1.
5
Unit V V V µA µA V
MHz pF
Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring metho...
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