Silicon NPN Transistor - Panasonic
Description
Transistors
This product complies with the RoHS Directive (EU 2002/95/EC).
2SC4410G
Silicon NPN epitaxial planar type
For UHF amplification
■ Features
■ Package
• Allowing the small current and low voltage operation
• Code
• High transition frequency fT
SMini3-F2
• S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing
/ ■ Absolute Maximum Ratings Ta = 25°C
• Marking Symbol: 2X • Pin Name
1: Base 2: Emitter 3: Collector
Parameter
Symbol Rating
Unit
e pe) Collector-base voltage (Emitter open) VCBO
10
V
c e.
d ty Collector-emitter voltage (Base open) VCEO
7
V
n d stag tinue Emitter-base voltage (Collector open) VEBO
2
V
a e cle con Collector current
IC
10
mA
lifecy , dis Collector power dissipation
PC
50
mW
n u duct typed Junction temperature
Tj
150
°C
te tin Pro ed Storage temperature
Tstg −55 to +150 °C
in n s followlianngefdoudriscontinu ■ Electrical Characteristics Ta = 25°C ± 3°C
a o lude e, p Parameter
Symbol
Conditions
Min Typ Max Unit
c d inc e typ Collector-base cutoff current (Emitter open) ICBO VCB = 10 V, IE = 0
tinue anc Emitter-base cutoff current (Collector open) IEBO VEB = 1.
5 V, IC = 0
M is con inten Forward current transfer ratio
hFE VCE = 1 V, IC = 1 mA
/Dis ma Transition frequency
fT
VCE = 1 V, IC = 1 mA, f = 0.
8 GHz
ce pe, Collector output capacitance
D nan e ty (Common base, input open circuited)
Cob VCB = 1 V, IE = 0, f = 1 MHz
1
µA
1
µA
50
200
4
GHz
0.
4
pF
ainte nanc Foward transfer gain M inte Maximum unilateral power gain d ma Noise figure
S21e2 GUM NF
VCE = 1 V, IC = 1 mA, f = 0.
8 GHz VCE = 1 V, IC = 1 mA, f = 0.
8 GHz VCE = 1 V, IC = 1 mA, f = 0.
8 GHz
6.
0
dB
15
dB
3.
5
dB
(plane Note) 1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2.
Handle the product with care because this is sensitive to the electrostatic breakdown by its stru...
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