Silicon NPN Transistor - Panasonic
Description
Power Transistors
2SC4359
Silicon NPN triple diffusion planar type
For high breakdown voltage high-speed switching ■ Features
(0.
7)
15.
0±0.
3 11.
0±0.
2
Unit: mm 5.
0±0.
2
(3.
2)
• High-speed switching
21.
0±0.
5 15.
0±0.
2
• High collector-base voltage (Emitter open) VCBO
φ 3.
2±0.
1
• Wide safe oeration area • Satisfactory linearity of forward current transfer ratio hFE
■ Absolute Maximum Ratings TC = 25°C
/ Parameter
Symbol Rating
Unit
16.
2±0.
5 (3.
5)
Solder Dip
2.
0±0.
2 1.
1±0.
1
2.
0±0.
1 0.
6±0.
2
e Collector-base voltage (Emitter open) VCBO
900
V
pe) Collector-emitter voltage (E-B short) VCES
900
V
nc d ge.
ed ty Collector-emitter voltage (Base open) VCEO
800
V
sta tinu Emitter-base voltage (Collector open) VEBO
7
V
a e cycle iscon Base current
IB
1
A
life d, d Collector current
IC
3
A
n u duct type Peak collector current
ICP
5
A
te tin Pro ed Collector power dissipation
PC
70
W
four ntinu Ta = 25°C
3.
0
ing isco Junction temperature
Tj
150
°C
in n follow ed d Storage temperature
Tstg −55 to +150 °C
5.
45±0.
3 10.
9±0.
5
123
1: Base 2: Collector 3: Emitter EIAJ: SC-92 TOP-3F-A1 Package
a coed inclucdeestype, plan ■ Electrical Characteristics TC = 25°C ± 2°C
M is ntinu tenan Parameter
Symbol
Conditions
isco ain Collector-emitter voltage (Base open) e/D e, m Collector-base cutoff current (Emitter open)
D nanc e typ Emitter-base cutoff current (Collector open)
inte anc Forward current transfer ratio Mamainten Collector-emitter saturation voltage ned Base-emitter saturation voltage (pla Transition frequency
VCEO ICBO IEBO hFE1 hFE2 VCE(sat) VBE(sat)
fT
IC = 10 mA, IB = 0 VCB = 900 V, IE = 0 VEB = 7 V, IC = 0 VCE = 5 V, IC = 0.
1 A VCE = 5 V, IC = 0.
8 A IC = 0.
8 A, IB = 0.
16 A IC = 0.
8 A, IB = 0.
16 A VCE = 5 V, IC = 0.
15 A, f = 1 MHz
Min Typ Max Unit
800
V
50
µA
50
µA
8
6
0.
6
V
1.
2
V
10
MHz
Turn-on time
ton
IC = 0.
8 A
0.
7
µs
Storage time
tstg
IB1 = 0.
16 A, IB2 = − 0.
32 A
2.
5
µs
Fall time
tf
VCC = 2...
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