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RJ1G12BGN

Part Number	RJ1G12BGN
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Mar 1, 2021
Datasheet	RJ1G12BGN PDF File

Features

·Drain Current –ID= 120A@ TC=25℃ ·Drain Source Voltage-
: VDSS=40V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.86mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

DESCRIPTION...

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