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R6504ENJ

Part Number	R6504ENJ
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Mar 1, 2021
Datasheet	R6504ENJ PDF File

Features

·Drain Current –ID= 4.0A@ TC=25℃ ·Drain Source Voltage-
: VDSS=650V(Min) ·Static Drain-Source On-Resistance
: RDS(on) = 1.05Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation

DESCRIPTION...

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