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APT56M60L

INCHANGE
Part Number APT56M60L
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Feb 25, 2021
Detailed Description isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 56A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Stati...
Datasheet PDF File APT56M60L PDF File

APT56M60L
APT56M60L

Overview
isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 56A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.
13Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 56 A IDM Drain Current-Single Pluse 210 A PD Total Dissipation @TC=25℃ 1040 W TJ Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.
12 ℃/W APT56M60L isc website：www.
iscsemi.
com 1 isc & iscsemi is registered trademark isc N-Channel MOSFET Transistor APT56M60L ELECTRICAL CHARACTERISTICS TJ=25℃ unle...


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