Super Junction MOSFET - Microsemi
Description
APT11N80BC3G
800V 11A 0.
45Ω
Super Junction MOSFET
TO-247
• Ultra low RDS(ON) • Low Miller Capacitance
• Ultra Low Gate Charge, Qg • Avalanche Energy Rated
• TO-247 Package
D G
S
MAXIMUM RATINGS Symbol Parameter
All Ratings: TC = 25°C unless otherwise specif ed.
APT11N80BC3G
UNIT
VDSS ID IDM VGS
VGSM
PD
Drain-Source Voltage
Continuous Drain Current @ TC = 25°C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient
Total Power Dissipation @ TC = 25°C Linear Derating Factor
800 11 33 ±20 ±30 156 1.
25
Volts Amps
Volts Watts W/°C
TJ,TSTG TL dv/dt IAR EAR EAS
Operating and Storage Junction Temperature Range
Lead Temperature: 0.
063" from Case for 10 Sec.
Drain-Source Voltage slope (VDS = 640V, ID = 11A, TJ = 125°C) Repetitive Avalanche Current 7 Repetitive Avalanche Energy 7 Single Pulse Avalanche Energy 4
-55 to 150 260 50 11 0.
2 470
°C V/ns Amps mJ
STATIC ELECTRICAL CHARACTERISTICS
Symbol Characteristic / Test Conditions
MIN TYP MAX UNIT
BVDSS RDS(on)
IDSS
IGSS VGS(th)
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250μA) Drain-Source On-State Resistance 2 (VGS = 10V, ID = 7.
1A) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V) Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V, TJ = 150°C) Gate-Source Leakage Current (VGS = ±20V, VDS = 0V) Gate Threshold Voltage (VDS = VGS, ID = 680μA)
800
Volts
0.
39 0.
45 Ohms
0.
5
20
μA
200
±100 nA
2.
1
3
3.
9 Volts
050-7136 Rev D 9-2017
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG.
"COOLMOS" is a trademark of Infineon Technologies AG"
DYNAMIC CHARACTERISTICS
APT11N80BC3G
Symbol Characteristic
Test Conditions
MIN TYP MAX UNIT
Ciss Coss Crss Qg Qgs Qgd td(on)
tr td(off)
tf
Eon
Eoff
Eon
Eoff
Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge 3 Gate-Source Charge Gate-Drain ("Miller ") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy 6 Turn-off Switching ...
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