N-Channel MOSFET - INCHANGE
Description
isc N-Channel MOSFET Transistor
APT11N80BC3G
FEATURES ·Drain Current –ID=11A@ TC=25℃ ·Drain Source Voltage-
: VDSS=800V(Min) ·Static Drain-Source On-Resistance
: RDS(on) =0.
45Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
DESCRIPTION ·Designed for use in switch mode power supplies and general
purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
800
V
VGS
Gate-Source Voltage-Continuous
±20
V
ID
Drain Current-Continuous
11
A
IDM
Drain Current-Single Pluse
33
A
PD
Total Dissipation @TC=25℃
156
W
TJ
Max.
Operating Junction Temperature -55~150 ℃
Tstg
Storage Temperature
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance, Junction to Case
MAX UNIT 0.
42 ℃/W
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isc N-Channel MOSFET Transistor
APT11N80BC3G
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS= 0; ID= 0.
25mA
VGS(th) Gate Threshold Voltage
VDS= VGS; ID= 0.
68mA
RDS(on) Drain-Source On-Resistance
VGS= 10V; ID=7.
1A
IGSS
Gate-Body Leakage Current
IDSS
Zero Gate Voltage Drain Current
VSD
Forward On-Voltage
VGS= ±20V;VDS= 0
VDS= 800V; VGS= 0 VDS= 800V; VGS= 0@TJ=150℃
IS=11A; VGS= 0
MIN MAX UNIT
800
V
2.
1
3.
9
V
0.
45
Ω
±100 nA
20 200
μA
1.
2
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if y...
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