N-Channel MOSFET - INCHANGE
Description
isc N-Channel MOSFET Transistor
2SK1180
DESCRIPTION ·Drain Current –ID= 10A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 500V(Min) ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed especially for low voltage,high speed applications, ·Chopper regulator,DC-DC converter and motor drive
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL ARAMETER
VALUE UNIT
VDSS
Drain-Source Voltage (VGS=0)
500
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-continuous@ TC=25℃
10
A
Ptot
Total Dissipation@TC=25℃
85
W
Tj
Max.
Operating Junction Temperature 150
℃
Tstg
Storage Temperature Range
-55~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance,Junction to Case 1.
47 ℃/W
isc website：www.
iscsemi.
com
1 isc & iscsemi is registered trademark
isc N-Channel MOSFET Transistor
·ELECTRICAL CHARACTERISTICS (TC=25℃)
SYMBOL
PARAMETER
CONDITIONS
V(BR)DSS Drain-Source Breakdown Voltage
VGS=0; ID= 0.
25mA
VGS(TH)
Gate Threshold Voltage
VDS=VGS,ID= 0.
25mA
RDS(ON) Drain-Source On-stage Resistance
VGS= 10V; ID=5A
IGSS
Gate Source Leakage Current
IDSS
Zero Gate Voltage Drain Current
VGS= ±20 V; VDS= 0 VDS=500V; VGS= 0
VSD
Diode Forward Voltage
IS=5A; VGS=0
2SK1180
MIN
MAX UNIT
500
V
2
4
V
0.
6
Ω
±500
nA
250
μA
1.
5
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be used in these special applications.
ISC makes no w...
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