Silicon NPN Power Transistor - INCHANGE
Description
isc Silicon NPN Power Transistor
FJP13009
DESCRIPTION ·Collector–Emitter Sustaining Voltage
: VCEO(SUS) = 400V(Min.
) ·Collector Saturation Voltage
: VCE(sat) = 1.
5 (Max) @ IC= 8.
0A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in high-voltage, high-speed, power swit-
ching in inductive circuit, they are particularly suited for 115 and 220V switchmode applications such as switching regulators,inverters,Motor controls,Solenoid/Relay drivers and deflection circuits.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCEV
Collector-Emitter Voltage
700
V
VCEO Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current-Continuous
12
A
ICM
Collector Current-peak
24
A
IB
Base Current
6
A
IBM
Base Current-Peak
PC
Collector Power Dissipation TC=25℃
Ti
Junction Temperature
12
A
100
W
150
℃
Tstg
Storage Temperature Range
-65~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c Thermal Resistance,Junction to Case
MAX 1.
25
UNIT ℃/W
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isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS) Collector-Emitter Sustaining Voltage
VCE(sat)-1 Collector-Emitter Saturation Voltage
VCE(sat)-2 Collector-Emitter Saturation Voltage
VCE(sat)-3 Collector-Emitter Saturation Voltage
VBE(sat)-1 Base-Emitter Saturation Voltage
VBE(sat)-2 Base-Emitter Saturation Voltage
ICBO
Collector Cutoff Current
IEBO
Emitter Cutoff Current
hFE-1
DC Current Gain
hFE-2
DC Current Gain
CONDITIONS IC= 10mA; IB= 0 IC= 5A ;IB= 1A IC= 8A ;IB= 1.
6A IC= 12A ;IB= 3A IC= 5A ;IB= 1A IC= 8A ;IB= 1.
6A VCB= 700V; IE=0 VEB= 9V; IC= 0 IC= 5A; VCE= 5V IC= 8A; VCE= 5V
hFE-1 Classifications
H1
H2
8-17
15-28
FJP13009
MIN MAX UNIT
400
V
1.
0
V
1.
5
V
3.
0
V
1.
2
V
1.
6
V
1
mA
1
mA
8
40
6
30
NOTICE： ISC res...
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