isc Silicon NPN Power Transistor
3DD401
DESCRIPTION ·Collector-Emitter Breakdown Voltage-
:V(BR)CEO= 150V(Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Power amplifier applications. ·Vertical output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO Collector-Base Voltage
200
V
VCEO Collector-Emitter Voltage
150
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current-Continuous
2
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction Temperature
0. 5
A
25
W
150
℃
Tstg
Storage Temperature Range
-55~150 ℃
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isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0
V(BR)CBO Collector-Base Breakdown Voltage
IC= 0. 5mA; IE= 0
V(BR)EBO Emitter-Base Breakdown Voltage
IE= 0. 5mA; IC= 0
VCE(sat) Collector-Emitter Saturation Voltage IC= 500mA; IB= 50mA
VBE(sat) Base-Emitter Saturation Voltage
IC= 500mA; IB= 50mA
ICBO
Collector Cutoff Current
VCB= 100V ; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE
DC Current Gain
IC= 0. 4A ; VCE= 10V
3DD401
MIN TYP. MAX UNIT
150
V
200
V
5
V
1
V
1. 5
V
50 μA
10 μA
40
240
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented only as a guide for the applications of our products. ISC products are intended for usage in general electronic equipment. The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field. Please contact us if you intend our products to be used in these special applica...
3DD401 PDF File
