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AOU7S65

INCHANGE
Part Number AOU7S65
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Jan 20, 2021
Detailed Description isc N-Channel MOSFET Transistor AOU7S65 FEATURES ·Drain Current –ID= 7.0A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(M...
Datasheet PDF File AOU7S65 PDF File

AOU7S65
AOU7S65

Overview
isc N-Channel MOSFET Transistor AOU7S65 FEATURES ·Drain Current –ID= 7.
0A@ TC=25℃ ·Drain Source Voltage- : VDSS=650V(Min) ·Static Drain-Source On-Resistance : RDS(on) =0.
65Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 7.
0 A IDM Drain Current-Single Pluse 30 A PD Total Dissipation @TC=25℃ 89 W TJ Max.
Operating Junction Temperature -50~150 ℃ Tst...


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