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AOU4N60

INCHANGE
Part Number AOU4N60
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Jan 20, 2021
Detailed Description isc N-Channel MOSFET Transistor AOU4N60 FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min...
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AOU4N60
AOU4N60

Overview
isc N-Channel MOSFET Transistor AOU4N60 FEATURES ·Drain Current –ID= 4A@ TC=25℃ ·Drain Source Voltage- : VDSS=600V(Min) ·Static Drain-Source On-Resistance : RDS(on) =2.
3Ω(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION ·Designed for use in switch mode power supplies and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage-Continuous ±30 V ID Drain Current-Continuous 4 A IDM Drain Current-Single Pluse 14 A PD Total Dissipation @TC=25℃ 104 W TJ Max.
Operating Junction Temperature -50~150 ℃ Tstg S...


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