IGBT - Infineon
Description
IKW25N120T2
TrenchStop® 2nd generation Series
Low Loss DuoPack : IGBT in 2nd generation TrenchStop®
with soft, fast recovery anti-parallel Emitter Controlled Diode
C
Short circuit withstand time – 10s
Designed for :
- Frequency Converters
- Uninterrupted Power Supply TrenchStop® 2nd generation for 1200 V applications offers :
G E
- very tight parameter distribution
- high ruggedness, temperature stable behavior
Easy paralleling capability due to positive temperature coefficient in VCE(sat)
Low EMI
PG-TO-247-3
Low Gate Charge
Very soft, fast recovery anti-parallel Emitter Controlled HE Diode Qualified according to JEDEC1 for target applications
Pb-free lead plating; RoHS compliant
Complete product spectrum and PSpice Models : http://www.
infineon.
com/igbt/
Type
VCE
IC VCE(sat),Tj=25°C Tj,max Marking Code
IKW25N120T2 1200V 25A
1.
7V
175C K25T1202
Maximum Ratings
Parameter
Symbol
Collector-emitter voltage DC collector current (Tj=150°C) TC = 25C TC = 110C Pulsed collector current, tp limited by Tjmax Turn off safe operating area VCE 1200V, Tj 175C Diode forward current (Tj=150°C) TC = 25C TC = 110C Diode pulsed current, tp limited by Tjmax Gate-emitter voltage Short circuit withstand time2) VGE = 15V, VCC 600V, Tj, start 175C Power dissipation TC = 25C Operating junction temperature Storage temperature Soldering temperature, 1.
6mm (0.
063 in.
) from case for 10s Wavesoldering only, temperature on leads only
VCE IC
ICpuls -
IF
IFpuls VGE tSC
Ptot
Tj Tstg -
Package PG-TO-247-3
Value 1200
50 25 100 100
40 25 100 20 10
349
-40.
.
.
+175 -55.
.
.
+150
260
Unit V A
V s W C
1 J-STD-020 and JESD-022 2) Allowed number of short circuits: <1000; time between short circuits: >1s.
IFAG IPC TD VLS
1
Rev.
2.
2 12.
06.
2013
IKW25N120T2
TrenchStop® 2nd generation Series
Thermal Resistance
Parameter
Characteristic IGBT thermal resistance, junction – case Diode thermal resistance, junction – case Thermal resistance, junction – am...
Similar Datasheet
- K25T120 IKW25T120 - Infineon Technologies
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