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3N60A4

Part Number	3N60A4
Manufacturer	Fairchild Semiconductor
Description	N-Channel IGBT
Published	Dec 26, 2020
Detailed Description	Data Sheet HGTD3N60A4S, HGTP3N60A4 August 2003 600V, SMPS Series N-Channel IGBT The HGTD3N60A4S and the HGTP3N60A4 are...
Datasheet	3N60A4 PDF File

Overview

Data Sheet HGTD3N60A4S, HGTP3N60A4 August 2003 600V, SMPS Series N-Channel IGBT The HGTD3N60A4S and the HGTP3N60A4 are MOS gated high voltage switching devices combining the best features of MOSFETs and bipolar transistors.
These devices have the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.
The much lower onstate voltage drop varies only moderately between 25oC and 150oC.
This IGBT is ideal for many high voltage switching applications operating at high frequencies where low conduction losses are essential.
This device has been optimized for high frequency switch mode power supplies.
Formerly Developmental Type TA49327.
Ordering Information...

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