N-Ch 30V Fast Switching MOSFET - UBIQ
Description
QM3004D
N-Ch 30V Fast Switching MOSFETs
General Description
The QM3004D is the highest performance trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications .
The QM3004D meet the RoHS and Green Product requirement , 100% EAS guaranteed with full function reliability approved.
Features
z Advanced high cell density Trench technology z Super Low Gate Charge z Excellent CdV/dt effect decline z 100% EAS Guaranteed z Green Device Available
Product Summery
BVDSS
RDSON
ID
30V
8.
5mΩ
55A
Applications
z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
z Networking DC-DC Power System z Load Switch
TO252 Pin Configuration
D
Absolute Maximum Ratings
Symbol VDS VGS
ID@TC=25℃ ID@TC=100℃ ID@TA=25℃ ID@TA=70℃
IDM EAS IAS PD@TC=25℃ PD@TA=25℃ TSTG
TJ
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3
Avalanche Current Total Power Dissipation4 Total Power Dissipation4
Storage Temperature Range
Operating Junction Temperature Range
S G
Rating 30 ±20 55 40 13.
6 11.
4 110 130 34 41 2.
42
-55 to 175 -55 to 175
Units V V A A A A A mJ A W W ℃ ℃
Thermal Data
Symbol RθJA RθJC
Parameter Thermal Resistance Junction-ambient (Steady State)1
Thermal Resistance Junction-Case1
1
Typ.
-----
Max.
62 3.
6
Unit ℃/W ℃/W
Rev A.
02 D051311
QM3004D
N-Ch 30V Fast Switching MOSFETs
Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
Symbol
Parameter
BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient
RDS(ON) Static Drain-Source On-Resistance2
VGS(th) △VGS(th)
Gate Threshold Voltage VGS(th) Temperature Coefficient
IDSS
Drain-Source Leakage Current
IGSS gfs Rg Qg Qgs Qgd Td(on) Tr Td(off) Tf Ciss Coss Crss
Gate-Source Leakage Current...
Similar Datasheet
