NPN Transistor - Toshiba
Description
Bipolar Transistors Silicon NPN Triple-Diffused Type
2SC5200N
1.
Applications
• Power Amplifiers
2.
Features
(1) High collector voltage: VCEO = 230 V (min) (2) Complementary to 2SA1943N (3) Recommended for 100-W high-fidelity audio frequency amplifier output stage
3.
Packaging and Internal Circuit
2SC5200N
1.
Base 2.
Collector (Heatsink) 3.
Emitter
TO-3P(N)
4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Tc = 25)
Characteristics
Symbol
Rating
Unit
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Base current Collector power dissipation
(Note 1)
VCBO VCEO VEBO
IC IB PC
230
V
230
5
15
A
1.
5
150
W
Junction temperature Storage temperature
Tj
150
Tstg
-55 to 150
Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Note 1: Ensure that the junction temperature does not exceed 150.
Start of commercial production
2012-08
1
2015-05-12
Rev.
2.
0
5.
Thermal Characteristics
2SC5200N
Junction-to-case thermal resistance
Characteristics
Symbol Rth(j-c)
6.
Electrical Characteristics
6.
1.
Static Characteristics (Unless otherwise specified, Tc = 25)
Max
Unit
0.
83
/W
Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain
Collector-emitter saturation voltage Base-emitter voltage
Symbol
Test Condition
ICBO IEBO V(BR)CEO hFE(1) hFE(2) VCE(sat) VBE
VCB = 230 V, IE = 0 A VEB = 5 V, IC...
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