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30J101

Toshiba
Part Number 30J101
Manufacturer Toshiba
Description Silicon N-Channel IGBT
Published Dec 19, 2020
Detailed Description Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Application...
Datasheet PDF File 30J101 PDF File

30J101
30J101

Overview
Preliminary TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J101 High Power Switching Applications GT30J101 Unit: mmç • The 3rd Generation • Enhancement-Mode • High Speed: tf = 0.
30 µs (max) • Low Saturation Voltage: VCE (sat) = 2.
7 V (max) Maximum Ratings (Ta = 25°C)ç Characteristic Collector-emitter voltage Gate-emitter voltage Collector current DC 1 ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range Symbol VCES VGES IC ICP PC Tj Tstg Rating Unit 600 V ±20 V 30 A 60 155 W 150 °C −55~150 °C JEDEC JEITA TOSHIBA Weight: 4.
6 g ― ― 2-16C1C 1 2002-01-18 GT30J101 Electrical Characteristics (Ta = 25°C) C...


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