N-Channel MOSFET - Renesas
Description
2SK1334
Silicon N Channel MOS FET
Application
High speed power switching
Features
• Low on-resistance • High speed switching • Low drive current • No secondary Breakdown • Suitable for switching regulator and DC-DC converter
REJ03G0932-0200 (Previous: ADE-208-1271)
Rev.
2.
00 Sep 07, 2005
Outline
RENESAS Package code: PLZZ0004CA-A (Package name: UPAK R )
21 3
4
D
1.
Gate
2.
Drain
G
3.
Source
4.
Drain
Note: Marking is “BY”.
S
*UPAK is a trademark of Renesas Technology Corp.
Rev.
2.
00 Sep 07, 2005 page 1 of 6
2SK1334
Absolute Maximum Ratings
Item
Symbol
Drain to source voltage
VDSS
Gate to source voltage
VGSS
Drain current Drain peak current
ID ID(pulse)*1
Body to drain diode reverse drain current Channel dissipation
IDR Pch*2
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1.
PW ≤ 10 µs, duty cycle ≤ 1%
2.
When using the alumina ceramic board (12.
5 × 20 × 0.
7 mm)
Ratings 200 ±20 1 2 1 1 150
–55 to +150
(Ta = 25°C) Unit
V V A A A W °C °C
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Drain to source breakdown voltage V(BR)DSS 200
—
—
V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20
—
—
V IG = ±100 µA, VDS = 0
Gate to source leak current
IGSS
—
—
±10
µA VGS = ±16 V, VDS = 0
Zero gate voltage drain current
IDSS
—
—
50
µA VDS = 160 V, VGS = 0
Gate to source cutoff voltage Static drain to source on state resistance
Forward transfer admittance
VGS(off)
2.
0
—
4.
0
RDS(on)
—
—
2.
5
3.
8
4.
5
7.
0
|yfs|
0.
4
0.
6
—
V ID = 1 mA, VDS = 10 V
Ω ID = 0.
5 A, VGS = 10 V *3
Ω
ID = 2 A, VGS = 10 V *3
S
ID = 0.
5 A, VDS = 10 V *3
Input capacitance
Ciss
—
80
—
pF VDS = 10 V, VGS = 0,
Output capacitance
Coss
—
40
—
pF f = 1 MHz
Reverse transfer capacitance
Crss
—
7
—
pF
Turn-on delay time Rise time
td(on)
—
5
—
ns ID = 0.
5 A, VGS = 10 V,
tr
—
8
—
ns RL = 60 Ω
Turn-off delay time
td(off)
—
10
—
ns
Fall time
tf
—
7
—...
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