N-Channel MOSFET - INCHANGE
Description
iscN-Channel MOSFET Transistor
IRFR214
·FEATURES ·Low drain-source on-resistance:
RDS(ON) ≤2.
0Ω @VGS=10V ·Enhancement mode:
Vth = 2.
0 to 4.
0V (VDS = 10 V, ID=0.
25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·DESCRITION ·Switching Voltage Regulators
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VDSS
Drain-Source Voltage
250
V
VGS
Gate-Source Voltage
±20
V
ID
Drain Current-Continuous
2.
2
A
IDM
Drain Current-Single Pulsed
8.
8
A
PD
Total Dissipation @TC=25℃
25
W
Tj
Max.
Operating Junction Temperature -55~150
℃
Tstg
Storage Temperature
-55~150
℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
MAX 5.
0
UNIT ℃/W
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iscN-Channel MOSFET Transistor
IRFR214
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown Voltage VGS=0V; ID= 0.
25mA
250
V
VGS(th)
Gate Threshold Voltage
VDS= 10V; ID=0.
25mA
2.
0
4.
0
V
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=1.
3A
2.
0
Ω
IGSS IDSS VSDF
Gate-Source Leakage Current
VGS= ±20V;VDS= 0V
Drain-Source Leakage Current
VDS=250V; VGS= 0V VDS=200V; VGS= 0V;TJ=125℃
Diode forward voltage
IDR =2.
2A, VGS = 0 V
±100 nA
25 250
uA
2.
0
V
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be used in these special applications.
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