DatasheetsPDF.com

IRFIZ24G

Vishay
Part Number IRFIZ24G
Manufacturer Vishay
Description Power MOSFET
Published Dec 15, 2020
Detailed Description Power MOSFET IRFIZ24G, SiHFIZ24G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.) (nC) Qgs (nC) Qgd (nC...
Datasheet PDF File IRFIZ24G PDF File

IRFIZ24G
IRFIZ24G


Overview
Power MOSFET IRFIZ24G, SiHFIZ24G Vishay Siliconix PRODUCT SUMMARY VDS (V) RDS(on) (Ω) Qg (Max.
) (nC) Qgs (nC) Qgd (nC) Configuration 60 VGS = 10 V 25 5.
8 11 Single 0.
10 D TO-220 FULLPAK G GDS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free SnPb FEATURES • Isolated Package • High Voltage Isolation = 2.
5 kVRMS (t = 60 s; Available f = 60 Hz) RoHS* • Sink to Lead Creepage Distance = 4.
8 mm COMPLIANT • 175 °C Operating Temperature • Dynamic dV/dt Rating • Low Thermal Resistance • Lead (Pb)-free Available DESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications.
The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink.
This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product.
The FULLPAK is mounted to a heatsink using a single clip or by a single screw fixing.
TO-220 FULLPAK IRFIZ24GPbF SiHFIZ24G-E3 IRFIZ24G SiHFIZ24G ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current Pulsed Drain Currenta VGS at 10 V TC = 25 °C TC = 100 °C ID IDM Linear Derating Factor Single Pulse Avalanche Energyb EAS Maximum Power Dissipation Peak Diode Recovery dV/dtc TC = 25 °C PD dV/dt Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Mounting Torque 6-32 or M3 screw Notes a.
Repetitive rating; pulse width limited by maximum junction temperature (see fig.
11).
b.
VDD = 25 V, starting TJ = 25 °C, L = 595 µH, RG = 25 Ω, IAS = 14 A (see fig.
12).
c.
ISD ≤ 17 A, dI/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d.
1.
6 mm from case.
LIMIT 60...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)