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IRFBC20

Part Number	IRFBC20
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Dec 15, 2020
Detailed Description	iscN-Channel MOSFET Transistor IRFBC20 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 4.4Ω (MAX) ·Enhancement mo...
Datasheet	IRFBC20 PDF File

Overview

iscN-Channel MOSFET Transistor IRFBC20 ·FEATURES ·Low drain-source on-resistance: RDS(ON) = 4.
4Ω (MAX) ·Enhancement mode: Vth = 2 to 4V (VDS = 10 V, ID=0.
25mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching Voltage Regulators ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 600 V VGS Gate-Source Voltage ±20 V ID Drain Current-Continuous 2.
2 A IDM Drain Current-Single Pulsed 8 A PD Total Dissipation @TC=25℃ 50 W Tj Max.
Operating Junction Temperature -55~150 ℃ Tstg Storage Temperature -55~150 ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER...

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