Power Transistor - Infineon
Description
IPP072N10N3 G IPI072N10N3 G
OptiMOS®3 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary V DS R DS(on),max ID
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
Type
IPI072N10N3 G
IPP072N10N3 G
100 V 7.
2 mΩ 80 A
Package Marking
PG-TO262-3 072N10N
PG-TO220-3 072N10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
Continuous drain current
ID
T C=25 °C2)
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=80 A, R GS=25 Ω
Gate source voltage
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22 2) See figure 3
Value
Unit
80
A
70
320
160
mJ
±20
V
150
W
-55 .
.
.
175
°C
55/175/56
Rev.
2.
1
page 1
2008-10-21
IPP072N10N3 G IPI072N10N3 G
Parameter
Symbol Conditions
Thermal characteristics
Thermal resistance, junction - case Thermal resistance, junction - ambient
R thJC R thJA
minimal footprint 6 cm2 cooling area3)
min.
Values typ.
Unit max.
-
-
1 K/W
-
-
62
-
-
40
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
100
-
-V
Gate threshold voltage
V GS(th) V DS=V GS, I D=90 µA
2
2.
7
3.
5
Zero gate voltage drain current
I DSS
V DS=100 V, V GS=0 V, T j=25 °C
-
0.
1
1 µA
Gate-source leakage current Drain-source on-state resistance
Gate resistance Transconductance
V DS=100 V, V GS=0 V, T j=125 °C
-
I GSS
V GS=20 V, V DS=0 V
-
R DS(on) V GS=10 V, I D=80 A
-
V GS=6 V, I D=40 A
-
RG
-
g fs
|V DS|>2|I D|R DS(on)max, I D=80 A
50
10
100
1
100 nA
6.
2
7.
2 mΩ
7.
6
12.
7
1.
6
-Ω
99
-S
...
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