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STP34NM60N

INCHANGE
Part Number STP34NM60N
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 9, 2020
Detailed Description isc N-Channel MOSFET Transistor STP34NM60N FEATURES ·Drain Current –ID=31.5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 60...
Datasheet PDF File STP34NM60N PDF File

STP34NM60N
STP34NM60N


Overview
isc N-Channel MOSFET Transistor STP34NM60N FEATURES ·Drain Current –ID=31.
5A@ TC=25℃ ·Drain Source Voltage- : VDSS= 600V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 105mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS VGS Drain-Source Voltage Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 600 V ±25 V 31.
5 A 126 A 250 W 150 ℃ -55~150 ℃ THERMAL CHARACTERIS...



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