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STB12NM50ND

Part Number	STB12NM50ND
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Dec 4, 2020
Detailed Description	isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Stat...
Datasheet	STB12NM50ND PDF File

Overview

isc N-Channel MOSFET Transistor FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage- : VDSS= 500V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 380mΩ(Max) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VDSS Drain-Source Voltage VGS Gate-Source Voltage-Continuous ID Drain Current-Continuous IDM Drain Current-Single Pluse PD Total Dissipation @TC=25℃ TJ Max.
Operating Junction Temperature Tstg Storage Temperature VALUE UNIT 500 V ±25 V 11 A 44 A 100 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL ...

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