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SPI12N50C3

INCHANGE
Part Number SPI12N50C3
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Dec 3, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.38Ω ·Enhancement mode ·Fast Sw...
Datasheet PDF File SPI12N50C3 PDF File

SPI12N50C3
SPI12N50C3

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤0.
38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·New revolutionary high voltage technology ·Ultra low effective capacitance ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 500 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous 11.
6 IDM Drain Current-Single Pulsed 34.
8 PD Total Dissipation @TC=25℃ 125 Tj Max.
Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBO...


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