Part Number | SiHG30N60E |
Manufacturer | INCHANGE |
Description | N-Channel MOSFET |
Features | ·Drain Source Voltage- : VDSS= 600V(Min) ·Static drain-source on-resistance: RDS(on) ≤125mΩ@VGS=10V ·100% avalanche test... |
Published | Nov 27, 2020 |
Datasheet | SiHG30N60E PDF File |