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TIP35AB

Part Number	TIP35AB
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Nov 25, 2020
Detailed Description	isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = 1.5A ·Collector-Emitter Sustaining V...
Datasheet	TIP35AB PDF File

Overview

isc Silicon NPN Power Transistor DESCRIPTION ·DC Current Gain- : hFE= 25(Min)@IC = 1.
5A ·Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 60V(Min) ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Designed for use in general purpose power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 25 A ICM Collector Current-peak 40 A IB Base Current 5 A PC Collector Power Dissipation@ TC=25℃ 100 W Tj Junction Temperature 150 ℃ Tstg Sto...

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