DatasheetsPDF.com

2SD1817

Part Number	2SD1817
Manufacturer	INCHANGE
Description	NPN Transistor
Published	Nov 25, 2020
Detailed Description	isc NPN Epitaxial Planar Silicon Transistor 2SD1817 DESCRIPTION ·High DC current gain ·Collector-Emitter Breakdown Vol...
Datasheet	2SD1817 PDF File

Overview

isc NPN Epitaxial Planar Silicon Transistor 2SD1817 DESCRIPTION ·High DC current gain ·Collector-Emitter Breakdown Voltage- : V(BR)CEO= 60V(Min) ·Low Collector Saturation Voltage- : VCE(sat)= 1.
5V(Max) @IC= 2.
0A ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Relay drivers,High speed inverters,converters and other general high-current switching applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO VCEO Collector-Base Voltage Collector-Emitter Voltage 80 V 60 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 3 A ICP Collector Current-Pulse PC Collector Power Dissipation @ TC=25℃ ...

Similar Datasheet

2SD180 Silicon NPN Power Transistor - Inchange Semiconductor
2SD1800 NPN Epitaxial Silicon Transistor - Sanyo Semicon Device
2SD1801 Bipolar Transistor - ON Semiconductor
2SD1801 Silicon NPN Power Transistor - Inchange Semiconductor
2SD1801 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device
2SD1802 Silicon NPN Power Transistor - Inchange Semiconductor
2SD1802 NPN Transistor - TRANSYS
2SD1802 NPN Epitaxial Planar Silicon Transistors - GME
2SD1802 Bipolar Transistor - ON Semiconductor
2SD1802 PNP/NPN Epitaxial Planar Silicon Transistors - Sanyo Semicon Device

Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)