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MJE13005D

Part Number	MJE13005D
Manufacturer	INCHANGE
Description	TO-252 NPN Transistor
Published	Nov 25, 2020
Detailed Description	Isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Wide Area of Safe Operatio...
Datasheet	MJE13005D PDF File

Overview

Isc Silicon NPN Power Transistor DESCRIPTION ·High Voltage Capability ·High Speed Switching ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Fluorescent lamp ·Electronic ballast ·Electronic transformer ·Switch mode power supply ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current-Continuous PC Collector Power Dissipation @TC=25℃ Tj Junction Temperature 4 A 65 W 150 ℃ Tstg Storage Temperature -55~150 ℃ MJE13005D isc website：www.
iscsemi.
com 1 isc & iscsem...

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