NPN Transistor - INCHANGE
Description
isc Silicon NPN Power Transistor
DESCRIPTION ·Collector–Emitter Sustaining Voltage-
: VCEO(SUS) = 350 V(Min) ·DC Current Gain-
: hFE = 25(Min) @ IC= 50mA ·Low Collector Saturation Voltage-
: VCE(sat) = 1.
5V(Max.
)@ IC= 100mA ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low power audio amplifier and low-current,
high-speed switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCEO
Collector-Emitter Voltage
VCEV
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current-Continuous
ICM
Collector Current-Peak
IB
Base Current
Collector Power Dissipation
PC
Ta=25℃ Collector Power Dissipation
TC=25℃
TJ
Junction Temperature
Tstg
Storage Temperature Range
VALUE 350 375 6 0.
5 1 0.
25 0.
24 30
-65~150 -65~150
UNIT V V V A A A
W
℃ ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
Rth j-c
Thermal Resistance,Junction to Case
4.
167
UNIT ℃/W
MJE2360T
isc Website：www.
iscsemi.
com
1 isc & iscsemi is registered trademark
isc Silicon NPN Power Transistor
ELECTRICAL CHARACTERISTICS
TC =25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 2.
5mA; IB= 0
VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 100mA ;IB=10mA
VBE(on) Base-Emitter On Voltage
IC= 100mA; VCE= 10V
ICEO
Collector Cutoff Current
VCE= 250V; IB=0
ICEX
Collector Cutoff Current
VCE= 375V; VBE(off)= 1.
5V
ICBO
Collector Cutoff Current
VCB= 375V; IE= 0
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
hFE-1
DC Current Gain
IC= 50m A ; VCE= 10V
hFE-2
DC Current Gain
IC= 100mA ; VCE= 10V
MJE2360T
MIN MAX UNIT
350
V
1.
5
V
1
V
0.
25
mA
0.
5
mA
0.
1
mA
0.
1
mA
25
200
15
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended f...
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