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2SK1167

Part Number	2SK1167
Manufacturer	INCHANGE
Description	N-Channel MOSFET
Published	Nov 23, 2020
Detailed Description	isc N-Channel MOSFET Transistor 2SK1167 ·FEATURES ·With TO-3PN packaging ·Low drain-source on-resistance: RDS(ON) =0.3...
Datasheet	2SK1167 PDF File

Overview

isc N-Channel MOSFET Transistor 2SK1167 ·FEATURES ·With TO-3PN packaging ·Low drain-source on-resistance: RDS(ON) =0.
36Ω (MAX) ·Enhancement mode: Vth = 3.
0 to 4.
0V (VDS = 10 V, ID=1mA) ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operationz ·APPLICATIONS ·Switching applications ·DC-DC converters ·Uninterruptible power supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 450 V VGSS Gate-Source Voltage ±30 V ID Drain Current-Continuous 15 A IDM Drain Current-Single Pulsed 60 A PD Total Dissipation 100 W Tj Operating Junction Temperature 150 ℃ Tstg Storage Temperature ...

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