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IXTQ110N10P

INCHANGE
Part Number IXTQ110N10P
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 20, 2020
Detailed Description isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance :...
Datasheet PDF File IXTQ110N10P PDF File

IXTQ110N10P
IXTQ110N10P

Overview
isc N-Channel MOSFET Transistor ·FEATURES ·Drain Source Voltage- : VDSS= 100V(Min) ·Static Drain-Source On-Resistance : RDS(on) = 15mΩ(Max) ·Fast Switching ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switch-Mode and Resonant-Mode Power Supplies ·DC-DC Converters ·AC and DC Motor Drives ·Robotics and Servo Controls ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 100 V VGS Gate-Source Voltage-Continuous ±20 V ID Drain Current-Continuous 110 A IDM Drain Current-Single Plused 250 A PD Total Dissipation @TC=25℃ 480 W Tj Max.
Operating Junction Temperat...


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