Schottky Barrier Rectifier - INCHANGE
Description
Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR20300C
FEATURES ·Low leakage current ·Low forword voltage ·High surge current capability ·Low stored charge majority carrier conduction ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching power supply ·Converters ·Reverse battery protection
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VRRM VRMS
VR
Peak Repetitive Reverse Voltage RMS Voltage DC Blocking Voltage
IF(AV)
Average Rectified Forward Current @Tc=125℃
VALUE
UNI T
300
V
20
A
IFSM
Nonrepetitive Peak Surge Current (60Hz half-sine wave )
180
A
TJ
Junction Temperature
-65~150 ℃
Tstg
Storage Temperature Range
-65~150 ℃
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Schottky Barrier Rectifier
INCHANGE Semiconductor
MBR20300C
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MAX 3.
0
UNIT ℃/W
ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%)
SYMBOL
PARAMETER
CONDITIONS
VF
Maximum Instantaneous Forward Voltage IF= 10A; Tc= 25℃ IF= 10A; Tc= 125℃
IR
Maximum Instantaneous Reverse Current VR= rated VRRM; Tc= 25℃ VR= rated VRRM; Tc= 125℃
MAX
0.
95 0.
85
0.
5 3
UNIT
V µA mA
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be used in these special applications.
ISC makes no warranty or guarantee regarding the suitability of its products for any particular purpose, nor does ISC assume any liability ari...
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