Schottky Barrier Rectifier - INCHANGE
Description
Schottky Barrier Rectifier
FEATURES ·Schottky Barrier Chip ·Guard Ring Die Construction for Transient Protection ·Low Power Loss/High Efficiency ·High Surge Capability ·High Current Capability，Low Forward Voltage Drop ·Plastic Material：UL Flammability ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for low-voltage,high frequency inverters，free wheeling and polarrity protection applications .
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
UNIT VALUE
VRRM VRWM
VR
IF(AV)
Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage
Average Rectified Forward Current
(Rated VR) TC= 125℃
45
V
10
A
Nonrepetitive Peak Surge Current
IFSM
(Surge applied at rated load conditions half- 230 × 2
A
wave, single phase, 60Hz)
TJ
Junction Temperature
-40~150 ℃
Tstg
Storage Temperature Range
-40~150 ℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth j-c
Thermal Resistance,Junction to Case
MBR10L45CD
MAX 2.
0
UNIT ℃/W
isc website：www.
iscsemi.
com
1 isc & iscsemi is registered trademark
Schottky Barrier Rectifier
MBR10L45CD
ELECTRICAL CHARACTERISTICS (Pulse Test: Pulse Width=300μs,Duty Cycle≤1%)
SYMBOL
PARAMETER
CONDITIONS
VF
Maximum Instantaneous Forward Voltage IF= 5A ; TC= 25℃ IF= 5A ; TC= 125℃
IR
Maximum Instantaneous Reverse Current Rated DC Voltage, TC= 25℃ Rated DC Voltage, TC= 100℃
MAX
0.
55 0.
52
0.
1 10
UNIT V mA
NOTICE： ISC reserves the rights to make changes of the content herein the datasheet at any time without notification.
The information contained herein is presented only as a guide for the applications of our products.
ISC products are intended for usage in general electronic equipment.
The products are not designed for use in equipment which require specialized quality and/or reliability, or in equipment which could have applications in hazardous environments, aerospace industry, or medical field.
Please contact us if you intend our products to be used ...
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