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IXTP05N100

INCHANGE
Part Number IXTP05N100
Manufacturer INCHANGE
Description N-Channel MOSFET
Published Nov 16, 2020
Detailed Description isc N-Channel MOSFET Transistor IXTP05N100 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 17Ω@VGS=10V ·Fully ...
Datasheet PDF File IXTP05N100 PDF File

IXTP05N100
IXTP05N100

Overview
isc N-Channel MOSFET Transistor IXTP05N100 ·FEATURES ·Static drain-source on-resistance: RDS(on) ≤ 17Ω@VGS=10V ·Fully characterized avalanche voltage and current ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATION ·DC/DC Converter ·Switch-Mode and Resonant-Mode Power Supplies ·Uninterrupted Power Supplies ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 1000 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 0.
75 IDM Drain Current-Single Pulsed 3 PD Total Dissipation @TC=25℃ 40 Tj Operating Junction Temperature -55~150 Tstg Storage Temperature -55~150 UNIT V...


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